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| savantic semiconductor product specification silicon pnp power transistors 2SB1503 d escription with to-3pl package complement to type 2sd2276 high dc current gain low collector saturation voltage darlington applications for power amplification optimum for 110w hi-fi output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i cm collector current-peak -12 a t c =25 120 p c collector power dissipation t a =25 3.5 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1503 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -140 v v cesat collector-emitter saturation voltage i c =-7a ;i b =-7ma -2.5 v v besat base-emitter saturation voltage i c =-7a ;i b =-7ma -3.0 v i cbo collector cut-off current v cb =-160v; i e =0 -100 a i ceo collector cut-off current v ce =-140v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe-1 dc current gain i c =-1a ; v ce =-5v 2000 h fe-2 dc current gain i c =-7a ; v ce =-5v 5000 30000 f t transition frequency i c =-0.5a ; v ce =-10v;f=1mhz 20 mhz switching times t on turn-on time 1.0 s t s storage time 1.5 s t f fall time i c =-7a ;i b1 =-i b2 =-7ma v cc =-50v 1.2 s h fe-2 classifications q s p 5000-10000 7000-21000 8000-30000 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1503 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm) |
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